On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology
نویسندگان
چکیده
This study presents a voltage-controlled oscillator (VCO) in cross-coupled pair configuration using multi-tapped switched inductor with two switch-loaded transformers 0.5 µm GaN technology. Two are placed at the inner and outer portions of inductor. All switches turned off to obtain lowest sub-band. The transformer three pairs is on alternately provide sub-band modes. A high-frequency band. highest Six modes selected wide tuning range. frequency range (FTR) VCO 27.8% from 3.81 GHz 8.04 varactor voltage 13 V 22 V. At 1 MHz offset carrier 4.27 GHz, peak phase noise −119.17 dBc/Hz. power supply 12 V, output 20.9 dBm. figure merit −186.93 dB because exhibits high power, low noise, FTR. To best author’s knowledge, FTR VCOs made GaN-based electron mobility transistors widest reported thus far.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10232928